advance product information june 30, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com 7 w ka band packaged power amplifier TGA4915-EPU-CP key features and performance ? frequency range: 26 - 31 ghz ? 38 dbm typical psat @ pin =21 dbm ? 22 db nominal gain ? 15 db typical return loss ? 0.25m phemt technology ? bias conditions: vd = 6v, idq = 4.2 a ? package dimensions: 0.526 x 0.650 x 0.073 in preliminary measured performance bias conditions: vd=6 v idq=4.2 a primary applications ? satellite ground terminals ? point to point product description the triquint TGA4915-EPU-CP is a compact 7 watt high power amplifier for ka band applications. the part is designed using triquints proven standard 0.25 um gate power phemt production process. the tga4915 provides a nominal 38 dbm of output power at an input power level of 21 dbm with a small signal gain of 22 db. the part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio. 30 31 32 33 34 35 36 37 38 39 40 24 25 26 27 28 29 30 31 32 frequency (ghz) power (dbm) psat p1db -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 24 25 26 27 28 29 30 31 32 33 34 frequency (ghz) gain (db) -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 return loss (db) in p ut output
advance product information june 30, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 8 v 2/ v - negative supply voltage range -3v to 0v i + positive supply current (quiescent) 8 a 2/ | i g | gate supply current 124 ma p in input continuous wave power 27 dbm 2/ p d power dissipation 34 w 2/, 3/ t ch operating channel temperature 150 c 4/, 5 / t m mounting temperature (30 seconds) 210 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ p d is the power dissipation allowed in order to reach a channel temperature of 150 c with a package base temperature of 70 c. when operated at this power dissipation with a baseplate temperature of 70 c, the mttf is 1.0e+6 hours. 4/ these ratings apply to each individual fet. 5/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGA4915-EPU-CP
advance product information june 30, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com TGA4915-EPU-CP table ii rf characterization table (t a = 25 q c, nominal) (vd = 6 v, id = 4.2 a) symbol parameter test condition typical units gain small signal gain f = 26-31 ghz 22 db irl input return loss f = 26-31 ghz 15 db orl output return loss f = 26-31 ghz 15 db pwr output power @ p1db f = 26-31 ghz 38 dbm table iii thermal information* parameter test conditions t ch ( q c) r 4 jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of package) v d = 6 v i d = 4.2 a p diss = 25.2 w 128 2.3 7.4 e+6 note: carrier at 70 c baseplate temperature. worst case is at saturated output power when dc power consumption rises to 44 w with 7 w rf power delivered to the load. power dissipated is 37 w and the temperature rise in the channel is 85 c. baseplate temperature must be reduced to 65 c to remain below the 150 c maximum channel temperature.
advance product information june 30, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com measured fixtured data bias conditions: vd = 6 v, id = 4.2 a TGA4915-EPU-CP 30 31 32 33 34 35 36 37 38 39 40 24 25 26 27 28 29 30 31 32 frequency (ghz) power (dbm) psat p1db -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 24 25 26 27 28 29 30 31 32 33 34 frequency (ghz) gain (db) -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 return loss (db) in p ut output
advance product information june 30, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com measured fixtured data bias conditions: vd = 6 v, id = 4.2 a TGA4915-EPU-CP 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4 -10-5 0 5 10152025 pin(dbm) ids(a) 0 2 4 6 8 10 12 14 16 18 20 pae (%) ids, top ids, lower pae 0 4 8 12 16 20 24 28 32 36 40 -10-5 0 5 10152025 input power (dbm) output power (dbm) & gain (db) 25ghz_power 25ghz_gain 27ghz_power 27ghz_gain 29ghz_power 29ghz_gain 31ghz_power 31ghz_gain @ 30 ghz
advance product information june 30, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4915-EPU-CP package pinout diagram 5),1 9*9'9' 9*9'9' 5)287 tga4915
advance product information june 30, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4915-EPU-CP dimensioned in inches side view 0. 81 53 0.0028/ 0.0 0 24 0.0000 lid substrate stack . 1.8542 .005 dimensions in inches 0.073 +/- 0.005 0.000 0.032 +0.003/-0.002 top view ;?? tga4915
advance product information june 30, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com ordering information part package style TGA4915-EPU-CP carrier plate assembly of a TGA4915-EPU-CP into a module manual assembly for prototypes 1. clean the module with acetone. rinse with alcohol and di water. allow the module to fully dry. 2. to improve the thermal and rf performance, we recommend attaching a heatsink to the bottom of the package. if the tga4915 is mounted to the heatsink with mounting screws, we recommend an indium shim or other compliant material be inserted between the tga4915 and the heatsink to reduce thermal contact resistance due to air gaps. the tga4915 may also be attached to the heatsink using sn63 solder or any other tin/lead solder. the tga4915 may also be mounted with diemat dm6030hk conductive epoxy or similar thermally and electrically conductive epoxy. 3. the dc and rf interconnects may be gold bondwires or gold ribbons. the rf interconnects should be as short as possible. a minimum of two 1 mil wires are recommended for the rf input, rf output, vg, and vd1 and vd3. six bondwires are recommended for vd2 and vd4. TGA4915-EPU-CP
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